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簡要描述:HgCdTe(MCT)多通道檢測模塊提供針對不同波長的四象限和多元線陣探測器模塊,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。
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品牌 | 其他品牌 | 價格區(qū)間 | 面議 |
---|---|---|---|
產(chǎn)地類別 | 國產(chǎn) | 應(yīng)用領(lǐng)域 | 環(huán)保,化工 |
HgCdTe(MCT)多通道檢測模塊
VIGO Photonics 提供針對不同波長的四象限和多元線陣探測器模塊,基于HgCdTe材料,集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。四象限模塊適合用于測量光束的移動或作為對準(zhǔn)系統(tǒng)的反饋;多元線陣探測器多用于非接觸式的溫度測量,常用于鐵路運輸。除標(biāo)準(zhǔn)5μm和10.6μm模塊,根據(jù)不同應(yīng)場景,可接受定制。
1、QM-5,四象限,制冷模塊,光敏面4×(0.2×0.2)
Specification (Ta = 20°C) | |
Parameter | Typical value |
Optical characteristics | |
Cut-on wavelength λcut-on (10%), µm | 3.5±0.5 |
Peak wavelength λpeak, µm | 4.5±0.5 |
Optimum wavelength λopt, µm | 5 |
Cut-off wavelength λcut-off (10%), µm | 6.0±0.5 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥7.0×109 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥6.8×109 |
Output noise density vn(100 kHz), nV/Hz1/2 | ≤500 |
Electrical parameters | |
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥1.7×105 |
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.6×105 |
Low cut-off frequency flo, Hz | DC |
High cut-off frequency fhi, Hz | ≥1M |
Output impedance Rout, Ω | 50 |
Output voltage swing Vout (RL = 1 MΩ*)), V | 0 – 4 |
Output voltage offset Voff, mV | max ±20 |
Power supply voltage Vsup, VDC | 7.5 |
Power consumption, W | max 6 |
Other information | |
Active elements material | epitaxial HgCdTe heterostructure |
Active areas A, mm×mm | 4×(0.2×0.2) |
Distance between active elements, mm | 0.02 |
Window | pSiAR |
Acceptance angle Φ | ~70° |
Ambient operating temperature Ta, °C | 10 to 30 |
Signal output sockets | 4×MCX |
Power supply socket | DC 2.1/5.5 |
Mounting hole | M4 |
Fan | yes |
2、QM-10.6,四象限,非制冷模塊,光敏面4×(1×1)
Specification (Ta = 20°C) | |
Parameter | Typical value |
Optical characteristics | |
Cut-on wavelength λcut-on (10%), µm | 3.0±1.0 |
Peak wavelength λpeak, µm | 8.0±2.0 |
Optimum wavelength λopt, µm | 10.6 |
Cut-off wavelength λcut-off (10%), µm | 12.0±1.0 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥1.0×107 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥4.5×106 |
Output noise density vn(100 kHz) µV/Hz1/2 | ≤4.5 |
Electrical parameters | |
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥2.2×102 |
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.1×102 |
Low cut-off frequency flo, Hz | DC |
High cut-off frequency fhi, Hz | ≥1M |
Output impedance Rout, Ω | 50 |
Output voltage swing Vout(RL = 1 MΩ*)), V | 0 – 4 |
Output voltage offset Voff, mV | max ±20 |
Power supply voltage Vsup, VDC | 7.5 |
Power consumption, W | max 6 |
Other information | |
Active elements material | epitaxial HgCdTe heterostructure |
Active areas A, mm×mm | 4×(1×1) |
Distance between active elements, mm | 0.15±0.1 |
Window | none |
Acceptance angle Φ | ~70° |
Ambient operating temperature Ta, °C | 10 to 30 |
Signal output sockets | 4×MCX |
Power supply socket | DC 2.1/5.5 |
Mounting hole | M4 |
Fan | yes |
1、4EM-5,1×4線陣,制冷模塊,光敏面4×(0.2×0.2)
Specification (Ta = 20°C) | |
Parameter | Typical value |
Optical characteristics | |
Cut-on wavelength λcut-on (10%), µm | 3.5±0.5 |
Peak wavelength λpeak, µm | 4.5±0.5 |
Optimum wavelength λopt, µm | 5 |
Cut-off wavelength λcut-off (10%), µm | 6.0±0.5 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥7.0×109 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥6.8×109 |
Output noise density vn(100 kHz), nV/Hz1/2 | ≤500 |
Electrical parameters | |
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W | ≥1.7×105 |
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W | ≥1.6×105 |
Low cut-off frequency flo, Hz | DC |
High cut-off frequency fhi, Hz | ≥1M |
Output impedance Rout, Ω | 50 |
Output voltage swing Vout (RL = 1 MΩ*)), V | 0 – 4 |
Output voltage offset Voff, mV | max ±20 |
Power supply voltage Vsup, VDC | 7.5 |
Power consumption, W | max 6 |
Other information | |
Active elements material | epitaxial HgCdTe heterostructure |
Active areas A, mm×mm | 4×(0.2×0.2) |
Distance between active elements, mm | 0.05 |
Window | pSiAR |
Acceptance angle Φ | ~70° |
Ambient operating temperature Ta, °C | 10 to 30 |
Signal output sockets | 4×MCX |
Power supply socket | DC 2.1/5.5 |
Mounting hole | M4 |
Fan | yes |
2、4EM-5,1×32線陣,制冷模塊,光敏面4×(0.2×0.2)
Specification (Ta = 20°C, Vb = 0 mV) | Detection module type | |
Parameter | ||
32EM-5-01 | 32EM-5-02 | |
Optical characteristics | ||
Cut-on wavelength λcut-on (10%), µm | ≤2.0 | 3.7±0.2 |
Peak wavelength λpeak, µm | 4.25±0.2 | 4.75±0.2 |
Optimal wavelength λopt, µm | 5 | 5 |
Cut-off wavelength λcut-off (10%), µm | 5.6±0.2 | 5.8±0.2 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥3.5×109 | ≥2.4×109 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥2.2×109 | ≥2.2×109 |
Electrical parameters | ||
Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W | ≥3.5×104 | ≥5.0×104 |
Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W | ≥2.2×104 | ≥4.6×104 |
Low cut-off frequency flo, Hz | DC | DC |
High cut-off frequency fhi, kHz | ≥400 | ≥650 |
Output impedance Rout, Ω | 50 | 50 |
Output voltage swing Vout (RLoad = 1 MΩ), V | -1 (negative output) | -1 (negative output) |
Output voltage offset Voff, mVDC | max -200 | max -200 |
Power supply voltage Vsup, VDC | 5 | 5 |
Other information | ||
Active elements material | epitaxial HgCdTe heterostructure | |
Number of elements | 1×32 linear array | |
Active area of single element A, mm×mm | 0.125×1 | 0.1×0.1 |
Distance between active elements, µm | 25 | 50 |
Window | pAl2O3AR | |
Acceptance angle Φ | ~70° | |
Ambient operating temperature Ta, °C | 10 to 30 |
CO2激光(10.6µm)測量
激光功率監(jiān)控,激光束輪廓和定位
激光校準(zhǔn)
光譜學(xué)(氣體檢測,呼吸分析)
慢速和快速非接觸式溫度測量(鐵路運輸、工業(yè)和實驗室過程監(jiān)控)
光學(xué)分揀系統(tǒng)
激光束輪廓和定位
火焰和爆炸檢測
國防和安全
燃燒過程控制
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